Invention Grant
US08416393B2 Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures
有权
用于使用两个孔的半导体器件制造的交叉四极双光刻方法和装置
- Patent Title: Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures
- Patent Title (中): 用于使用两个孔的半导体器件制造的交叉四极双光刻方法和装置
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Application No.: US12417090Application Date: 2009-04-02
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Publication No.: US08416393B2Publication Date: 2013-04-09
- Inventor: Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
- Applicant: Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/72
- IPC: G03B27/72
Abstract:
Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
Public/Granted literature
- US20100255679A1 LITHOGRAPHY METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE FABRICATION Public/Granted day:2010-10-07
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