发明授权
- 专利标题: Methods and system for lithography calibration
- 专利标题(中): 光刻校准方法与系统
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申请号: US12613221申请日: 2009-11-05
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公开(公告)号: US08418088B2公开(公告)日: 2013-04-09
- 发明人: Jun Ye , Yu Cao , Hanying Feng
- 申请人: Jun Ye , Yu Cao , Hanying Feng
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.
公开/授权文献
- US20100119961A1 METHODS AND SYSTEM FOR LITHOGRAPHY CALIBRATION 公开/授权日:2010-05-13
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