Invention Grant
- Patent Title: Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
- Patent Title (中): 合金半导体量子点和浓度梯度合金量子点,其系列及其相关方法
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Application No.: US13157099Application Date: 2011-06-09
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Publication No.: US08420155B2Publication Date: 2013-04-16
- Inventor: Shuming Nie , Robert E. Bailey
- Applicant: Shuming Nie , Robert E. Bailey
- Applicant Address: US IN Indianapolis
- Assignee: Indiana University Research and Technology Corporation
- Current Assignee: Indiana University Research and Technology Corporation
- Current Assignee Address: US IN Indianapolis
- Agency: Leydig, Voit & Mayer, Ltd.
- Main IPC: C23C14/54
- IPC: C23C14/54

Abstract:
An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.
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