发明授权
- 专利标题： Ion implantation fabrication process for thin-film crystalline silicon solar cells
- 专利标题（中）： 薄膜晶体硅太阳能电池的离子注入制造工艺
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申请号： US12774713申请日： 2010-05-05
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公开(公告)号： US08420435B2公开(公告)日： 2013-04-16
- 发明人: Virendra V. Rana , Pawan Kapur , Mehrdad M. Moslehi
- 申请人： Virendra V. Rana , Pawan Kapur , Mehrdad M. Moslehi
- 申请人地址： US CA Milpitas
- 专利权人： Solexel, Inc.
- 当前专利权人： Solexel, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Hulsey, P.C.
- 代理商 John Ryan C. Wood; William N. Hulsey, III
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
A front contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In yet another embodiment, a back contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, base regions, and a front surface field are formed through ion implantation processes.
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