发明授权
US08422285B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
有权
用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
- 专利标题： Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
- 专利标题（中）： 用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
-
申请号： US13033021申请日： 2011-02-23
-
公开(公告)号： US08422285B2公开(公告)日： 2013-04-16
- 发明人: Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
- 申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
- 申请人地址： US CA San Jose
- 专利权人： Grandis, Inc.
- 当前专利权人： Grandis, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Convergent Law Group LLP
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
公开/授权文献
信息查询
