发明授权
US08426286B2 Method and device for a DRAM capacitor having low depletion ratio
有权
具有低耗尽率的DRAM电容器的方法和装置
- 专利标题： Method and device for a DRAM capacitor having low depletion ratio
- 专利标题（中）： 具有低耗尽率的DRAM电容器的方法和装置
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申请号： US13078917申请日： 2011-04-01
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公开(公告)号： US08426286B2公开(公告)日： 2013-04-23
- 发明人: Cheng Yang , Bo Tao , Jason Luo , Jingang Wu
- 申请人： Cheng Yang , Bo Tao , Jason Luo , Jingang Wu
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Kilpatrick Townsend & Stockton
- 优先权： CN201010154714 20100414
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided.
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