Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
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Application No.: US12155877Application Date: 2008-06-11
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Publication No.: US08426880B2Publication Date: 2013-04-23
- Inventor: Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
- Applicant: Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2007-0058981 20070615
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.
Public/Granted literature
- US20090001398A1 Semiconductor light emitting device and method of manufacturing the same Public/Granted day:2009-01-01
Information query
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