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US08426881B2 Light emitting diodes including two reflector layers 有权
发光二极管包括两个反射层

Light emitting diodes including two reflector layers
摘要:
A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
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