发明授权
US08429575B2 Method for resizing pattern to be written by lithography technique, and charged particle beam writing method
有权
用于通过光刻技术来调整图案的尺寸的方法，以及带电粒子束写入方法
- 专利标题： Method for resizing pattern to be written by lithography technique, and charged particle beam writing method
- 专利标题（中）： 用于通过光刻技术来调整图案的尺寸的方法，以及带电粒子束写入方法
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申请号： US13275448申请日： 2011-10-18
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公开(公告)号： US08429575B2公开(公告)日： 2013-04-23
- 发明人: Jun Yashima , Junichi Suzuki , Takayuki Abe
- 申请人： Jun Yashima , Junichi Suzuki , Takayuki Abe
- 申请人地址： JP Numazu-shi
- 专利权人： NuFlare Technology, Inc.
- 当前专利权人： NuFlare Technology, Inc.
- 当前专利权人地址： JP Numazu-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-249141 20060914
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.
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