Invention Grant
- Patent Title: Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
- Patent Title (中): 使用流化床反应器连续制备多晶硅的方法
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Application No.: US12609330Application Date: 2009-10-30
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Publication No.: US08431032B2Publication Date: 2013-04-30
- Inventor: Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
- Applicant: Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
- Applicant Address: KR Daejeon
- Assignee: Korea Research Institute of Chemical Technology
- Current Assignee: Korea Research Institute of Chemical Technology
- Current Assignee Address: KR Daejeon
- Agency: Frommer Lawrence & Haug LLP
- Agent Ronald R. Santucci
- Priority: KR10-2006-0053826 20060615
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone.
Public/Granted literature
- US20100044342A1 METHOD FOR CONTINUAL PREPARATION OF POLYCRYSTALLINE SILICON USING A FLUIDIZED BED REACTOR Public/Granted day:2010-02-25
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