发明授权
US08431956B2 Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure
失效
发光芯片具有碳纳米管结构中具有氮化物半导体的缓冲层
- 专利标题： Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure
- 专利标题（中）： 发光芯片具有碳纳米管结构中具有氮化物半导体的缓冲层
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申请号： US13091141申请日： 2011-04-21
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公开(公告)号： US08431956B2公开(公告)日： 2013-04-30
- 发明人: Jian-Shihn Tsang
- 申请人： Jian-Shihn Tsang
- 申请人地址： TW New Taipei
- 专利权人： Hon Hai Precision Industry Co., Ltd.
- 当前专利权人： Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址： TW New Taipei
- 代理机构： Altis Law Group, Inc.
- 优先权： TW100108464A 20110314
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.
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