Invention Grant
- Patent Title: High aspect ratio capacitively coupled MEMS devices
- Patent Title (中): 高纵横比电容耦合MEMS器件
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Application No.: US13220542Application Date: 2011-08-29
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Publication No.: US08432006B2Publication Date: 2013-04-30
- Inventor: Venkatesh Mohanakrishnaswamy , Loi N. Nguyen
- Applicant: Venkatesh Mohanakrishnaswamy , Loi N. Nguyen
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.
Public/Granted literature
- US20120056281A1 HIGH ASPECT RATIO CAPACITIVELY COUPLED MEMS DEVICES Public/Granted day:2012-03-08
Information query
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