Invention Grant
- Patent Title: Method of fabricating an integrated circuit protected against reverse engineering
- Patent Title (中): 制造防止逆向工程的集成电路的方法
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Application No.: US13299267Application Date: 2011-11-17
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Publication No.: US08434046B2Publication Date: 2013-04-30
- Inventor: Fabrice Marinet
- Applicant: Fabrice Marinet
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group PLLC
- Priority: FR1004497 20101118
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
The disclosure relates to a method of fabricating an integrated circuit on a semiconductor chip, the method comprising: designing an architecture of the integrated circuit comprising at least first and second standard cells implementing a same basic function; designing for the standard cell at least first and second cell layouts presenting random differences; designing an integrated circuit layout corresponding to the integrated circuit architecture; fabricating the integrated circuit according to the integrated circuit layout; using the first cell layout to implement the first standard cell in the integrated circuit layout; and using the second cell layout to implement the second standard cell in the integrated circuit layout. The method can be used for protection of an integrated circuit against reverse engineering.
Public/Granted literature
- US20120131533A1 METHOD OF FABRICATING AN INTEGRATED CIRCUIT PROTECTED AGAINST REVERSE ENGINEERING Public/Granted day:2012-05-24
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