发明授权
- 专利标题： Fabrication of phosphor free red and white nitride-based LEDs
- 专利标题（中）： 无磷红和氮化镓基LED的制造
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申请号： US12682526申请日： 2007-10-12
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公开(公告)号： US08436334B2公开(公告)日： 2013-05-07
- 发明人: Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
- 申请人： Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
- 申请人地址： SG Singapore
- 专利权人： Agency for Science, Technology and Research
- 当前专利权人： Agency for Science, Technology and Research
- 当前专利权人地址： SG Singapore
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 国际申请： PCT/SG2007/000350 WO 20071012
- 国际公布： WO2009/048425 WO 20090416
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.