发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US12817592申请日: 2010-06-17
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公开(公告)号: US08436378B2公开(公告)日: 2013-05-07
- 发明人: Akihiro Kojima , Yoshiaki Sugizaki , Hideki Shibata , Hideo Tamura , Tetsuro Komatsu , Masayuki Ishikawa
- 申请人: Akihiro Kojima , Yoshiaki Sugizaki , Hideki Shibata , Hideo Tamura , Tetsuro Komatsu , Masayuki Ishikawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2010-069716 20100325
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.