- 专利标题： Semiconductor device with high-breakdown-voltage transistor
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申请号： US13291162申请日： 2011-11-08
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公开(公告)号： US08436419B2公开(公告)日： 2013-05-07
- 发明人: Akira Yamada , Nozomu Akagi
- 申请人： Akira Yamada , Nozomu Akagi
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2007-292047 20071109; JP2008-231833 20080910
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/02
摘要：
A semiconductor device includes a high-breakdown-voltage transistor having a semiconductor layer. The semiconductor layer has an element portion and a wiring portion. The element portion has a first wiring on a front side of the semiconductor layer and a backside electrode on a back side of the semiconductor layer. The element portion is configured as a vertical transistor that causes an electric current to flow in a thickness direction of the semiconductor layer between the first wiring and the backside electrode. The backside electrode is elongated to the wiring portion. The wiring portion has a second wiring on the front side of the semiconductor layer. The wiring portion and the backside electrode provide a pulling wire that allows the electric current to flow to the second wiring.
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