发明授权
- 专利标题： Memory cell that includes a carbon-based memory element and methods of forming the same
- 专利标题（中）： 包含碳基记忆元件的记忆单元及其形成方法
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申请号： US12765955申请日： 2010-04-23
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公开(公告)号： US08436447B2公开(公告)日： 2013-05-07
- 发明人: Pankaj Kalra , Raghuveer S. Makala
- 申请人： Pankaj Kalra , Raghuveer S. Makala
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
In a first aspect, a memory cell is provided, the memory cell including: (a) a first conducting layer formed above a substrate; (b) a second conducting layer formed above the first conducting layer; (c) a structure formed between the first and second conducting layers, wherein the structure includes a sidewall that defines an opening extending between the first and second conducting layers, and wherein the structure is comprised of a material that facilitates selective, directional growth of carbon nano-tubes; and (d) a carbon-based switching layer that includes carbon nano-tubes formed on the sidewall of the structure. Numerous other aspects are provided.
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