发明授权
US08436482B2 Semiconductor device, and method of fabricating semiconductor device
有权
半导体器件以及半导体器件的制造方法
- 专利标题： Semiconductor device, and method of fabricating semiconductor device
- 专利标题（中）： 半导体器件以及半导体器件的制造方法
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申请号： US12792036申请日： 2010-06-02
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公开(公告)号： US08436482B2公开(公告)日： 2013-05-07
- 发明人: Tadashi Yamaguchi
- 申请人： Tadashi Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人： Oki Semiconductor Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volentine & Whitt, PLLC
- 优先权： JP2009-154054 20090629
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L23/48
摘要：
There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion.
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