发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13479537申请日: 2012-05-24
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公开(公告)号: US08436965B2公开(公告)日: 2013-05-07
- 发明人: Tetsuji Ishitani , Daisuke Kubota , Takeshi Nishi
- 申请人: Tetsuji Ishitani , Daisuke Kubota , Takeshi Nishi
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2006-154801 20060602
- 主分类号: G02F1/1335
- IPC分类号: G02F1/1335 ; G02F1/1343
摘要:
External light is reflected due to a difference in refractive indices of a black matrix and a glass substrate. When the black matrix is a black resin, there is a difference in refractive indices of the black resin and a first substrate. Also, there is a difference in refractive indices of the colored layer and the first substrate. Therefore, external light is slightly reflected. There is a problem in that the reflected light reduces contrast. A structure in which one polarizing element having dichroism is interposed between a pair of substrates is employed, and a light interference layer is provided between a color filter and a glass substrate, whereby a difference in refractive indices is moderated to reduce light reflection.
公开/授权文献
- US20120228661A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-09-13
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