发明授权
US08437204B2 Memory array with corresponding row and column control signals 有权
具有相应行和列控制信号的存储器阵列

Memory array with corresponding row and column control signals
摘要:
Some embodiments regard a method comprising: controlling a row of cells of a memory array with a first signal; controlling a column of cells of the memory array with a second signal; transferring data from a cell activated by both the first signal and the second signal to a pair of bit lines associated with the cell; and using the data from the pair of bit lines as read data and as data written back to the cell to ensure the cell stores valid data.
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