发明授权
- 专利标题: Memory array with corresponding row and column control signals
- 专利标题(中): 具有相应行和列控制信号的存储器阵列
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申请号: US12792944申请日: 2010-06-03
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公开(公告)号: US08437204B2公开(公告)日: 2013-05-07
- 发明人: Chen Yen-Huei
- 申请人: Chen Yen-Huei
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman Ham & Berner, LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
Some embodiments regard a method comprising: controlling a row of cells of a memory array with a first signal; controlling a column of cells of the memory array with a second signal; transferring data from a cell activated by both the first signal and the second signal to a pair of bit lines associated with the cell; and using the data from the pair of bit lines as read data and as data written back to the cell to ensure the cell stores valid data.
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