Invention Grant
US08440549B2 Compound semiconductor device including aln layer of controlled skewness
有权
复合半导体器件包括受控偏移的Aln层
- Patent Title: Compound semiconductor device including aln layer of controlled skewness
- Patent Title (中): 复合半导体器件包括受控偏移的Aln层
-
Application No.: US13237084Application Date: 2011-09-20
-
Publication No.: US08440549B2Publication Date: 2013-05-14
- Inventor: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: Fujitsu Limited,Hitachi Cable Co., Ltd.
- Current Assignee: Fujitsu Limited,Hitachi Cable Co., Ltd.
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-093574 20070330
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L33/32
Abstract:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Public/Granted literature
- US20120067275A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS Public/Granted day:2012-03-22
Information query
IPC分类:
