Invention Grant
- Patent Title: Embedded memory device having MIM capacitor formed in excavated structure
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Application No.: US13028400Application Date: 2011-02-16
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Publication No.: US08441057B2Publication Date: 2013-05-14
- Inventor: Steven J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- Applicant: Steven J. Keating , Nick Lindert , Nadia Rahhal-Orabi , Brian Doyle , Satyarth Suri , Swaminathan Sivakumar , Lana Jong , Lin Sha
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
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