发明授权
US08441862B2 Program method of multi-bit memory device and data storage system using the same
有权
多位存储器件和数据存储系统的程序方法使用相同
- 专利标题: Program method of multi-bit memory device and data storage system using the same
- 专利标题(中): 多位存储器件和数据存储系统的程序方法使用相同
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申请号: US13080809申请日: 2011-04-06
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公开(公告)号: US08441862B2公开(公告)日: 2013-05-14
- 发明人: Hong Rak Son , Han Woong Yoo , Jaehong Kim , Jun Jin Kong
- 申请人: Hong Rak Son , Han Woong Yoo , Jaehong Kim , Jun Jin Kong
- 申请人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR10-2010-0033422 20100412
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
Provided is a program method of a multi-bit memory device with memory cells arranged in rows and columns. The program method includes a programming each memory cell of the first group of memory cells to a state within a first group of states according to a verify voltage level of a first group of verify voltage levels within a first range of levels, and programming each memory cell of the second group of memory cells to a state within a second group of states according to a verify voltage level of a second group of verify voltage levels within a second range of levels. The lowest verify voltage level in the second range of levels is higher than the highest verify voltage level in the first range of levels. A first voltage difference between adjacent verify voltage levels within the first range of levels is different from a second voltage difference between the highest verify voltage level of the second group of verify voltage levels and the lowest verify voltage level of the third group of verify voltage levels.