发明授权
US08444842B2 Electroplating methods and chemistries for deposition of group IIIA-group via thin films
失效
用于通过薄膜沉积IIIA族的电镀方法和化学物质
- 专利标题: Electroplating methods and chemistries for deposition of group IIIA-group via thin films
- 专利标题(中): 用于通过薄膜沉积IIIA族的电镀方法和化学物质
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申请号: US13306863申请日: 2011-11-29
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公开(公告)号: US08444842B2公开(公告)日: 2013-05-21
- 发明人: Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
- 申请人: Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
- 申请人地址: US CA San Jose
- 专利权人: SoloPower, Inc.
- 当前专利权人: SoloPower, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: C25D3/56
- IPC分类号: C25D3/56
摘要:
An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
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