Invention Grant
US08444842B2 Electroplating methods and chemistries for deposition of group IIIA-group via thin films
失效
用于通过薄膜沉积IIIA族的电镀方法和化学物质
- Patent Title: Electroplating methods and chemistries for deposition of group IIIA-group via thin films
- Patent Title (中): 用于通过薄膜沉积IIIA族的电镀方法和化学物质
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Application No.: US13306863Application Date: 2011-11-29
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Publication No.: US08444842B2Publication Date: 2013-05-21
- Inventor: Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
- Applicant: Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
- Applicant Address: US CA San Jose
- Assignee: SoloPower, Inc.
- Current Assignee: SoloPower, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: C25D3/56
- IPC: C25D3/56

Abstract:
An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
Public/Granted literature
- US20120199490A1 ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF GROUP IIIA-GROUP VIA THIN FILMS Public/Granted day:2012-08-09
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