发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13027551申请日： 2011-02-15
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公开(公告)号： US08445360B2公开(公告)日： 2013-05-21
- 发明人: Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
- 申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Ebara Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人： Ebara Corporation,Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2010-036114 20100222
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/30 ; H01L21/78 ; H01L21/301
摘要：
A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
公开/授权文献
- US20110207294A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2011-08-25
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