发明授权
- 专利标题: Variable resistance memory programming
- 专利标题(中): 可变电阻存储器编程
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申请号: US12967592申请日: 2010-12-14
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公开(公告)号: US08446758B2公开(公告)日: 2013-05-21
- 发明人: Xiaonan Chen
- 申请人: Xiaonan Chen
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described.
公开/授权文献
- US20120147667A1 VARIABLE RESISTANCE MEMORY PROGRAMMING 公开/授权日:2012-06-14