Invention Grant
- Patent Title: RC extraction for single patterning spacer technique
- Patent Title (中): RC提取单图案间隔技术
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Application No.: US13045839Application Date: 2011-05-09
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Publication No.: US08448120B2Publication Date: 2013-05-21
- Inventor: Cheng-I Huang , Hsiao-Shu Chao , Yi-Kan Cheng
- Applicant: Cheng-I Huang , Hsiao-Shu Chao , Yi-Kan Cheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F9/455

Abstract:
A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns.
Public/Granted literature
- US20120288786A1 RC EXTRACTION FOR SINGLE PATTERNING SPACER TECHNIQUE Public/Granted day:2012-11-15
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