Invention Grant
- Patent Title: Double patterning strategy for contact hole and trench in photolithography
- Patent Title (中): 光刻中接触孔和沟槽的双重图案化策略
-
Application No.: US13274840Application Date: 2011-10-17
-
Publication No.: US08450052B2Publication Date: 2013-05-28
- Inventor: Feng-Cheng Hsu , Jian-Hong Chen
- Applicant: Feng-Cheng Hsu , Jian-Hong Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.
Public/Granted literature
- US20120034778A1 Double Patterning Strategy for Contact Hole and Trench in Photolithography Public/Granted day:2012-02-09
Information query
IPC分类:
