发明授权
- 专利标题: Method of cutting semiconductor substrate
- 专利标题(中): 切割半导体衬底的方法
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申请号: US13608676申请日: 2012-09-10
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公开(公告)号: US08450187B2公开(公告)日: 2013-05-28
- 发明人: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
- 申请人: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2002-351600 20021203
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
公开/授权文献
- US20120329248A1 METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE 公开/授权日:2012-12-27
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