发明授权
- 专利标题： Substrate processing apparatus , method of manufacturing semiconductor device, and method of manufacturing substrate
- 专利标题（中）： 基板处理装置，半导体装置的制造方法以及基板的制造方法
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申请号： US12825005申请日： 2010-06-28
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公开(公告)号： US08450220B2公开(公告)日： 2013-05-28
- 发明人: Takafumi Sasaki , Sadao Nakashima , Yoshinori Imai , Koei Kuribayashi
- 申请人： Takafumi Sasaki , Sadao Nakashima , Yoshinori Imai , Koei Kuribayashi
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Brundidge & Stanger, P.C.
- 优先权： JP2009-156319 20090630; JP2010-114591 20100518
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.