According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.