发明授权
- 专利标题： Semiconductor device and fabrication method for the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US12713724申请日： 2010-02-26
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公开(公告)号： US08450734B2公开(公告)日： 2013-05-28
- 发明人: Masao Takahashi , Noriyuki Nagai
- 申请人： Masao Takahashi , Noriyuki Nagai
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2008-237914 20080917; JP2008-244856 20080924
- 主分类号： H01L23/525
- IPC分类号： H01L23/525
摘要：
A semiconductor device includes: a semiconductor element (1) having an internal circuit (17); and electrode pads (22, 22, . . . ) provided for the semiconductor element (1). The electrode pads (22, 22, . . . ) are electrically connected to the internal circuit (17) via control portions (31) for controlling electrical connection between the electrode pads (22, 22, . . . ) and the internal circuit (17).
公开/授权文献
- US20100148173A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME 公开/授权日：2010-06-17
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