Invention Grant
US08451354B2 TDI image sensor in CMOS technology with high video capture rate
有权
TDI图像传感器采用CMOS技术,视频采集率高
- Patent Title: TDI image sensor in CMOS technology with high video capture rate
- Patent Title (中): TDI图像传感器采用CMOS技术,视频采集率高
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Application No.: US13103492Application Date: 2011-05-09
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Publication No.: US08451354B2Publication Date: 2013-05-28
- Inventor: Yvon Cazaux , Benoit Giffard
- Applicant: Yvon Cazaux , Benoit Giffard
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR1002066 20100517; FR1002360 20100603; FR1002909 20100709
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.
Public/Granted literature
- US20110279725A1 IMAGE SENSOR IN CMOS TECHNOLOGY WITH HIGH VIDEO CAPTURE RATE Public/Granted day:2011-11-17
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