发明授权
US08455182B2 Composition for antireflection film formation and method for resist pattern formation using the composition
有权
用于防反射膜形成的组合物和使用该组合物的抗蚀剂图案形成方法
- 专利标题： Composition for antireflection film formation and method for resist pattern formation using the composition
- 专利标题（中）： 用于防反射膜形成的组合物和使用该组合物的抗蚀剂图案形成方法
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申请号： US12451747申请日： 2008-05-16
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公开(公告)号： US08455182B2公开(公告)日： 2013-06-04
- 发明人: Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
- 申请人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
- 申请人地址： JP Kanagawa
- 专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址： JP Kanagawa
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2007-147410 20070601
- 国际申请： PCT/JP2008/059045 WO 20080516
- 国际公布： WO2008/146625 WO 20081204
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/30
摘要：
A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.
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