Invention Grant
- Patent Title: Crystallization apparatus, crystallization method, method of manufacturing thin film transistor and method of manufacturing organic light emitting display apparatus
- Patent Title (中): 结晶装置，结晶方法，制造薄膜晶体管的方法和制造有机发光显示装置的方法
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Application No.: US13613923Application Date: 2012-09-13
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Publication No.: US08455337B2Publication Date: 2013-06-04
- Inventor: Seong-Hyun Jin , Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee
- Applicant: Seong-Hyun Jin , Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2010-0021836 20100311
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.
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