发明授权
US08455833B2 Single crystal scintillator material, method for producing same, radiation detector and PET system
有权
单晶闪烁体材料，其制造方法，辐射探测器和PET系统
- 专利标题： Single crystal scintillator material, method for producing same, radiation detector and PET system
- 专利标题（中）： 单晶闪烁体材料，其制造方法，辐射探测器和PET系统
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申请号： US13120217申请日： 2009-09-28
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公开(公告)号： US08455833B2公开(公告)日： 2013-06-04
- 发明人: Hiroyuki Okuda , Naoyuki Okamoto , Shinroh Itoh
- 申请人： Hiroyuki Okuda , Naoyuki Okamoto , Shinroh Itoh
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Metals, Ltd.
- 当前专利权人： Hitachi Metals, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2008-250978 20080929; JP2008-329041 20081225
- 国际申请： PCT/JP2009/004939 WO 20090928
- 国际公布： WO2010/035500 WO 20100401
- 主分类号： G01T1/164
- IPC分类号： G01T1/164
摘要：
A method for producing a single crystal scintillator material according to the present invention includes the steps of: providing a solvent including: at least one element selected from the group consisting of Li, Na, K, Rb and Cs; W and/or Mo; B; and oxygen; melting a Ce compound and a Lu compound that have been mixed with the solvent by heating the mixture to a temperature of 800° C. to 1,350° C.; and growing a single crystal by cooling the compounds melted. The single crystal is represented by the compositional formula (CexLu1-x)BO3, in which the mole fraction x of Ce satisfies 0.0001≦x≦0.05.