发明授权
US08455933B2 Image sensor using light-sensitive transparent oxide semiconductor material
有权
使用感光透明氧化物半导体材料的图像传感器
- 专利标题: Image sensor using light-sensitive transparent oxide semiconductor material
- 专利标题(中): 使用感光透明氧化物半导体材料的图像传感器
-
申请号: US12801392申请日: 2010-06-07
-
公开(公告)号: US08455933B2公开(公告)日: 2013-06-04
- 发明人: Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
- 申请人: Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2009-0132825 20091229
- 主分类号: H01L31/062
- IPC分类号: H01L31/062
摘要:
An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.