Invention Grant
- Patent Title: Region divided substrate and semiconductor device
- Patent Title (中): 区域划分衬底和半导体器件
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Application No.: US12902696Application Date: 2010-10-12
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Publication No.: US08455973B2Publication Date: 2013-06-04
- Inventor: Tetsuo Fujii , Masaya Tanaka , Keisuke Gotoh
- Applicant: Tetsuo Fujii , Masaya Tanaka , Keisuke Gotoh
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2009-276841 20091204; JP2010-176742 20100805
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.
Public/Granted literature
- US20110133295A1 REGION DIVIDED SUBSTRATE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-06-09
Information query
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