Invention Grant
- Patent Title: Semiconductor device and method of blowing fuse thereof
- Patent Title (中): 半导体装置及其熔断器的方法
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Application No.: US13296443Application Date: 2011-11-15
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Publication No.: US08455976B2Publication Date: 2013-06-04
- Inventor: Hiroyuki Furukawa
- Applicant: Hiroyuki Furukawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-135876 20070522
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device comprises an active region including a core circuit forming region and a buffer forming region, and a fuse element forming region arranged on a corner of the active region and to be able to be electrically fused. It is possible to arrange the fuse element without forming the fuse in the core circuit forming region by arranging the fuse element forming region at the corner of the active region.
Public/Granted literature
- US20120056296A1 SEMICONDUCTOR DEVICE AND METHOD OF BLOWING FUSE THEREOF Public/Granted day:2012-03-08
Information query
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