Invention Grant
- Patent Title: Electron emitting source and manufacturing method of electron emitting source
- Patent Title (中): 电子发射源和电子发射源的制造方法
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Application No.: US12745316Application Date: 2008-07-11
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Publication No.: US08456076B2Publication Date: 2013-06-04
- Inventor: Toshiyuki Morishita , Yoshinori Terui
- Applicant: Toshiyuki Morishita , Yoshinori Terui
- Applicant Address: JP Tokyo
- Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Stein IP, LLC
- Priority: JP2007-309726 20071130
- International Application: PCT/JP2008/062590 WO 20080711
- International Announcement: WO2009/069335 WO 20090604
- Main IPC: H01J1/15
- IPC: H01J1/15 ; H01J19/08 ; H01K1/02
Abstract:
An electron emitting source capable of preventing increase in an inter-terminal resistance and a manufacturing method of the electron emitting source. The electron emitting source comprises an electron emitting chip made of rare-earth hexaboride, and a heater constituted by a carbonaceous member for holding and heating the electron emitting chip, wherein an electrically conductive substance is provided in a gap between the electron emitting chip and the heater.
Public/Granted literature
- US20100301736A1 ELECTRON EMITTING SOURCE AND MANUFACTURING METHOD OF ELECTRON EMITTING SOURCE Public/Granted day:2010-12-02
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