发明授权
- 专利标题: Display device
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申请号: US12222339申请日: 2008-08-07
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公开(公告)号: US08456401B2公开(公告)日: 2013-06-04
- 发明人: Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
- 申请人: Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
- 申请人地址: JP Chiba-ken JP Hyogo-ken
- 专利权人: Hitachi Displays, Ltd.,Panasonic Liquid Crystal Display Co., Ltd.
- 当前专利权人: Hitachi Displays, Ltd.,Panasonic Liquid Crystal Display Co., Ltd.
- 当前专利权人地址: JP Chiba-ken JP Hyogo-ken
- 代理机构: Stites & Harbison PLLC
- 代理商 Juan Carlos A. Marquez, Esq.; Stephen J. Weyer, Esq.
- 优先权: JP2007-210876 20070813
- 主分类号: G09G3/36
- IPC分类号: G09G3/36 ; H01L31/00 ; H01L31/036
摘要:
The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.
公开/授权文献
- US20090073149A1 Display device 公开/授权日:2009-03-19