Invention Grant
- Patent Title: Semiconductor light emitting apparatus and light source apparatus using the same
- Patent Title (中): 半导体发光装置及使用其的光源装置
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Application No.: US12919194Application Date: 2009-06-02
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Publication No.: US08459840B2Publication Date: 2013-06-11
- Inventor: Atsuyoshi Ishimori , Shozo Oshio , Yasuharu Ueno , Noriyasu Tanimoto
- Applicant: Atsuyoshi Ishimori , Shozo Oshio , Yasuharu Ueno , Noriyasu Tanimoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Priority: JP2008-144557 20080602
- International Application: PCT/JP2009/060407 WO 20090602
- International Announcement: WO2009/148176 WO 20091210
- Main IPC: F21V9/16
- IPC: F21V9/16

Abstract:
A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.
Public/Granted literature
- US20110090703A1 SEMICONDUCTOR LIGHT EMITTING APPARATUS AND LIGHT SOURCE APPARATUS USING THE SAME Public/Granted day:2011-04-21
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