发明授权
US08460999B2 Non-volatile memory devices with multiple layers having band gap relationships among the layers
有权
具有层之间具有带隙关系的多层的非易失性存储器件
- 专利标题： Non-volatile memory devices with multiple layers having band gap relationships among the layers
- 专利标题（中）： 具有层之间具有带隙关系的多层的非易失性存储器件
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申请号： US13067405申请日： 2011-05-31
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公开(公告)号： US08460999B2公开(公告)日： 2013-06-11
- 发明人: Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
- 申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2007-0070152 20070712
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
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