发明授权
- 专利标题： Batch CVD method and apparatus for semiconductor process
- 专利标题（中）： 分批CVD法和半导体工艺装置
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申请号： US12838911申请日： 2010-07-19
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公开(公告)号： US08461059B2公开(公告)日： 2013-06-11
- 发明人: Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
- 申请人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-171557 20090722
- 主分类号： H01L21/473
- IPC分类号： H01L21/473
摘要：
A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
公开/授权文献
- US20110021033A1 BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 公开/授权日：2011-01-27