发明授权
- 专利标题： Light emitting diode element
- 专利标题（中）： 发光二极管元件
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申请号： US13270761申请日： 2011-10-11
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公开(公告)号： US08461069B2公开(公告)日： 2013-06-11
- 发明人: Syuji Matsumoto , Tomoyuki Kobayashi , Naoki Sugimoto , Satoshi Fujimine , Nobuhiro Nakamura
- 申请人： Syuji Matsumoto , Tomoyuki Kobayashi , Naoki Sugimoto , Satoshi Fujimine , Nobuhiro Nakamura
- 申请人地址： JP Tokyo
- 专利权人： Asahi Glass Company, Limited
- 当前专利权人： Asahi Glass Company, Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-118413 20050415; JP2005-254906 20050902
- 主分类号： C03C3/62
- IPC分类号： C03C3/62 ; H01L33/00 ; C03C3/19
摘要：
A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol% of SnO, from 15 to 50 mol% of P2O5, from 0.1 to 20 mol% of ZnO, from 0 to 10 mol% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.
公开/授权文献
- US20120074447A1 LIGHT EMITTING DIODE ELEMENT 公开/授权日：2012-03-29
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