A reverse-conducting semiconductor device includes a freewheeling diode and an insulated gate bipolar transistor (IGBT) on a common wafer. Part of the wafer forms a base layer with a base layer thickness. The IGBT includes a collector side and an emitter side arranged on opposite sides of the wafer. A first layer of a first conductivity type and a second layer of a second conductivity type are alternately arranged on the collector side. The first layer includes at least one first region with a first region width and at least one first pilot region with a first pilot region width. The second layer includes at least one second region with a second region width and at least one second pilot region with a second pilot region width. Each second region width is equal to or larger than the base layer thickness, whereas each first region width is smaller than the base layer thickness. Each second pilot region width is larger than each first pilot region width. Each first pilot region width is equal to or larger than two times the base layer thickness, and the sum of the areas of the second pilot regions is larger than the sum of the areas of the first pilot regions.