Invention Grant
US08464418B2 Method for temperature compensation in MEMS resonators with isolated regions of distinct material
有权
具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
- Patent Title: Method for temperature compensation in MEMS resonators with isolated regions of distinct material
- Patent Title (中): 具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
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Application No.: US12638919Application Date: 2009-12-15
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Publication No.: US08464418B2Publication Date: 2013-06-18
- Inventor: Emmanuel P. Quevy , David H. Bernstein
- Applicant: Emmanuel P. Quevy , David H. Bernstein
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: O'Keefe, Egan, Peterman & Enders LLP
- Main IPC: H04R31/00
- IPC: H04R31/00 ; H01L21/76

Abstract:
MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
Public/Granted literature
- US20100093125A1 METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL Public/Granted day:2010-04-15
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