Invention Grant
US08465884B2 Electron beam depicting pattern design, photomask, methods of depicting and fabricating photomask, and method of fabricating semiconductor device using the same
有权
描述图案设计，光掩模，描绘和制造光掩模的方法的电子束以及使用其制造半导体器件的方法
- Patent Title: Electron beam depicting pattern design, photomask, methods of depicting and fabricating photomask, and method of fabricating semiconductor device using the same
- Patent Title (中): 描述图案设计，光掩模，描绘和制造光掩模的方法的电子束以及使用其制造半导体器件的方法
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Application No.: US12974550Application Date: 2010-12-21
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Publication No.: US08465884B2Publication Date: 2013-06-18
- Inventor: Jin Choi , Sang-Hee Lee , Rae-Won Yi
- Applicant: Jin Choi , Sang-Hee Lee , Rae-Won Yi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0000602 20100105
- Main IPC: G03F1/20
- IPC: G03F1/20
Abstract:
A method of depicting a photomask using e-beams includes preparing a photomask having an e-beam resist, depicting the e-beam resist and forming an e-beam resist pattern on the photomask. Depicting the e-beam resist includes irradiating e-beams to an e-beam depiction region without irradiating the e-beams to an e-beam non-depiction region disposed in the e-beam depiction region. The e-beam depiction region and the e-beam non-depiction region are formed using an e-beam resist pattern having the same polarity.
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