Invention Grant
- Patent Title: Pressurized treatment of substrates to enhance cleaving process
- Patent Title (中): 加压处理底物以增强切割过程
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Application No.: US13399637Application Date: 2012-02-17
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Publication No.: US08466039B2Publication Date: 2013-06-18
- Inventor: Deepak A. Ramappa , Julian G. Blake
- Applicant: Deepak A. Ramappa , Julian G. Blake
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.
Public/Granted literature
- US20120156860A1 PRESSURIZED TREATMENT OF SUBSTRATES TO ENHANCE CLEAVING PROCESS Public/Granted day:2012-06-21
Information query
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