发明授权
- 专利标题: Pressurized treatment of substrates to enhance cleaving process
- 专利标题(中): 加压处理底物以增强切割过程
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申请号: US13399637申请日: 2012-02-17
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公开(公告)号: US08466039B2公开(公告)日: 2013-06-18
- 发明人: Deepak A. Ramappa , Julian G. Blake
- 申请人: Deepak A. Ramappa , Julian G. Blake
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.
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