发明授权
- 专利标题: Voltage sensitive resistor (VSR) read only memory
- 专利标题(中): 电压敏感电阻(VSR)只读存储器
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申请号: US12827197申请日: 2010-06-30
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公开(公告)号: US08466443B2公开(公告)日: 2013-06-18
- 发明人: Terence L. Kane , Yun-Yu Wang , Keith Kwong Hon Wong
- 申请人: Terence L. Kane , Yun-Yu Wang , Keith Kwong Hon Wong
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Joseph P. Abate; Ira D. Blecker
- 主分类号: H01L29/02
- IPC分类号: H01L29/02
摘要:
Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected to the semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 102, more preferably 103 and most preferably 104 when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.
公开/授权文献
- US20120001140A1 VOLTAGE SENSITIVE RESISTOR (VSR) READ ONLY MEMORY 公开/授权日:2012-01-05